| PART |
Description |
Maker |
| CJP04N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJU05N25 |
MOSFET MOSFET
Power Filed Effect Transistor
|
Glenair, Inc.
JIANGSU[Jiangsu Changjiang Electronics]
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MTV32N25E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MRF6522-70 MRF6522-70R306 MRF6522-70R3 |
RF Power Field Effect Transistor
|
http://
Freescale Semiconductor, Inc
|
| MTM2N50 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| VN98AK VN35AK VN66AK VN67AK VN99AK |
HELD EFFECT POWER TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
